Latchup current self-stop circuit for whole-chip latchup prevention in bulk CMOS integrated circuits
نویسندگان
چکیده
A latchup current self-stop methodology and circuit design, which are used to prevent damage in the bulk CMOS integrated circuits due to latchup, are proposed in this paper. In a bulk CMOS chip, the core circuit blocks are always latchup sensitive due to a low holding voltage of the parasitic SCR path. The proposed latchup prevention methodology and circuit design can detect and stop the occurrence of latchup without any process modification or extra fabrication cost. It is suitable for whole-chip latchup prevention of bulk CMOS integrated circuits. This proposed latchup current self-stop methodology and circuit have been verified in a 0.5-μm 1P3M bulk CMOS process.
منابع مشابه
Methodology on Extracting Compact Layout Rules for Latchup Prevention in Deep-Submicron Bulk CMOS Technology
An experimental methodology to find area-efficient compact layout rules to prevent latchup in bulk complimentary metal–oxide–semiconductor (CMOS) integrated circuits (ICs) is proposed. The layout rules are extracted from the test patterns with different layout spacings or distances. A new latchup prevention design by adding the additional internal double guard rings between input/output cells a...
متن کاملAnomalous latchup failure induced by on-chip ESD protection circuit in a high-voltage CMOS IC product
Latchup failure induced by electrostatic discharge (ESD) protection circuits occurred anomalously in a high-voltage IC product. Latchup issues existed at only three output pins, two of which belonged to the top and the other to the side. The layouts of top and bottom output pins are identical, and side output pins have another identical layouts. In our experiments it was found latchup of two to...
متن کاملSimulation of SOI MOSFET using ATLAS
Silicon on insulator (SOI) CMOS offers performance gain over bulk CMOS mainly due to reduced parasitic capacitances and latchup. It is most promising technology when low cost low power and low voltage suppply is required. kink effect and self heating are two important points of concern in case of SOI MOSFET. In this paper we first briefly discuss the SOI technology, kink effect and lattice heat...
متن کاملFailure analysis and solutions to overcome latchup failure event of a power controller IC in bulk CMOS technology
Latchup failure which occurred at only one output pin of a power controller IC product is investigated in this work. The special design requirement of the internal circuits causes the parasitic diode that is inherent between the n-well and p-substrate to be a triggering source of the latchup occurrence in this IC. The parasitic diode of the internal PMOS was easily turned on by an anomalous ext...
متن کاملOptical and Electrical Testing of Latchup in I/O Interface Circuits
Backside light emission and electrical measurements were used to evaluate the susceptibility to latchup of externally cabled I/O pins for a 0.13 μm technology generation [1,2] test chip, which was designed in a flip-chip package. Case studies of several Inputs/Outputs (I/Os) are shown along with conclusions regarding layout and floorplanning to ensure the robustness to various types of latchup ...
متن کامل